2N3055 NPN Power Transistor
Onsemi, USA
United States
Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.

Features :
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc
• Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
• Excellent Safe Operating Area
• Pb−Free Packages are Available*

MAXIMUM RATINGS
Rating Symbo Value Unit
Collector−Emitter Voltage VCEO 60 Vdc
Collector−Emitter Voltage VCER 70 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 7 Vdc
Collector Current − Continuous IC 15 Adc
Base Current IB 7 Adc
Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
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Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.

Features :
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc
• Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
• Excellent Safe Operating Area
• Pb−Free Packages are Available*

MAXIMUM RATINGS
Rating Symbo Value Unit
Collector−Emitter Voltage VCEO 60 Vdc
Collector−Emitter Voltage VCER 70 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 7 Vdc
Collector Current − Continuous IC 15 Adc
Base Current IB 7 Adc
Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
查看更多信息
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Austuna 2019 年 12 月 17 日 上午 7:43 
your profile is amazing and stanky all in one bundle of happiness
2N3055 NPN Power Transistor 2019 年 4 月 3 日 下午 12:16 
For business inquiries please visit https://www.onsemi.com/PowerSolutions/locateSalesSupport.do
Austuna 2019 年 4 月 3 日 上午 8:08 
Is this for purchase.
S k u l l 2019 年 3 月 26 日 上午 8:51 
Not sure if serious or meme
2N3055 NPN Power Transistor 2019 年 3 月 20 日 上午 8:16 
Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.
2N3055 NPN Power Transistor 2019 年 3 月 20 日 上午 8:16 
Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area • Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 60 Vdc Collector−Emitter Voltage VCER 70 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 7 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200 °C